INTEGRATED CIRCUIT DEVICES WITH BUMP STRUCTURES THAT INCLUDE A PROTECTION LAYER

Disclosed herein is a device that includes first and second spaced-apart conductive pads positioned in a layer of insulating material, first and second under-bump metallization layers that are conductively coupled to the first and second conductive pads, respectively, and first and second spaced-apart conductive bumps that are conductively coupled to the first and second under-bump metallization layers, respectively. Additionally, the device includes, among other things, a passivation layer positioned above the layer of insulating material between the first and second spaced-apart conductive bumps, and a protective layer positioned on the passivation layer, wherein the protective layer extends between and contacts the first and second under-bump metallization layers, the material of the protective layer being one of silicon dioxide, silicon oxyfluoride (SiOF), silicon nitride (SiN), and silicone carbon nitride (SiCN).