METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K GATE STRUCTURE

METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K GATE STRUCTURE

Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at...

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Bibliographische Detailangaben
Hauptverfasser: DESHMUKH SHASHANK C, MATSUSUE EIICHI, FINCH BARRETT, LIU WEI, PALAGASHVILI DAVID, PHAN ANH-KIET QUANG, WILLWERTH MICHAEL D, SHEN MEIHUA, SHIN JONG I, KAWASE YOHEI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.