WRITING CIRCUIT FOR A MAGNETORESISTIVE MEMORY CELL

According to embodiments of the present invention, a writing circuit for a magnetoresistive memory cell is provided. The writing circuit includes a first connecting terminal configured to provide a first electrical signal to switch a variable magnetization orientation of the free magnetic layer from a first magnetization orientation to a second magnetization orientation; a second connecting terminal configured to provide a second electrical signal to switch the magnetization orientation from the second magnetization orientation to the first magnetization orientation; and a sourcing switch configured to provide for a write operation a connection of the first or second connecting terminal to a node coupleable to the magnetoresistive memory cell. The first and second electrical signals have different amplitudes, and the first and second electrical signals are of the same polarity. Further embodiments relate to a memory cell arrangement and a method of writing into a target magnetoresistive memory cell.