NANO-SCALE VOID REDUCTION

Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to ca...

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Bibliographische Detailangaben
Hauptverfasser:	HWU JUSTIN JIA-JEN, GREENBERG THOMAS LARSON, GAUZNER GENNADY
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SPRAYING OR ATOMISING IN GENERAL TRANSPORTING
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Beschreibung
Zusammenfassung:	Resist imprinting void reduction method may include sealing a chamber. The chamber may be filled with an ambient inert gas, wherein the inert gas a solubility in a resist layer on a substrate greater than Helium. The method may also include establishing a pressure within the chamber sufficient to cause absorption of the ambient inert gas by the resist layer, and sufficient to suppress evaporation of the resist layer.