SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Disclosed is a semiconductor device including: a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element form...

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Bibliographische Detailangaben
Hauptverfasser: DOI YUUKI, ORITSU MINAKO, KAJI TAKAO, SASAKI KATSUHITO, KODAIRA TAKAAKI
Format: Patent
Sprache:eng
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Zusammenfassung:Disclosed is a semiconductor device including: a semiconductor substrate, an element isolating trench structure that includes an element isolating trench formed in one main surface of the semiconductor substrate, an insulating material that is formed within the element isolating trench, element formation regions that are surrounded by the element isolating trench, and semiconductor elements that are respectively formed in the element formation regions. The element isolating trench includes first element isolating trenches extending in a first direction, second element isolating trenches extending in a second direction that are at a right angle to the first direction, and third element isolating trenches extending in a third direction inclined at an angle theta (0°