GATE STRUCTURE HAVING LIGHTLY DOPED REGION

A gate structure includes a gate dielectric over a substrate, and a gate electrode over the gate dielectric, wherein the gate dielectric contacts sidewalls of the gate electrode. The gate structure further includes a nitrogen-containing dielectric layer surrounding the gate electrode, and a contact...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN KUANUNG, LO HSIENING, TSAI HAN-TING, WANG HAITING, HING FUNG KA, LU WEI-YUAN, CHENG CHUN-FAI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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Beschreibung
Zusammenfassung:	A gate structure includes a gate dielectric over a substrate, and a gate electrode over the gate dielectric, wherein the gate dielectric contacts sidewalls of the gate electrode. The gate structure further includes a nitrogen-containing dielectric layer surrounding the gate electrode, and a contact etch stop layer (CESL) surrounding the nitrogen-containing dielectric layer. The gate structure further includes an interlayer dielectric layer surrounding the CESL and a lightly doped region in the substrate, the lightly doped region extends beyond an interface of the sidewalls of the gate electrode and the gate dielectric.