CTE ADAPTION IN A SEMICONDUCTOR PACKAGE

A device such as a wafer-level package (WLP) device is proposed in which a dielectric layer is disposed between a surface of a semiconductor device and a surface of a redistribution layer (RDL). The dielectric layer may have at least one interconnect extending through the dielectric layer. The dielectric layer may have a coefficient of thermal expansion (CTE) value in a direction perpendicular to the surface of the semiconductor device that is less than a threshold value, and a Young's modulus that is greater than another threshold value. The dielectric layer may have a CTE value in a direction parallel to the surface of the semiconductor device at a surface of the dielectric layer facing the RDL that is greater than another threshold value