SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active...
Gespeichert in:
Hauptverfasser: | , , , , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | NAM SEOK-WOO YU TEA-KWANG LEAM HUN-HYEOUNG KIM TAE-HYUN KIM YONG-SEOK KIM JUNG-HWAN NAMKOONG HYUN |
description | A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. |
format | Patent |
fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2013320461A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2013320461A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2013320461A13</originalsourceid><addsrcrecordid>eNrjZDAPdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U3BzdArydHYM8fRzVwjxcFUIdvR15WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGxsZGBiZmho6GxsSpAgC5oii3</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME</title><source>esp@cenet</source><creator>NAM SEOK-WOO ; YU TEA-KWANG ; LEAM HUN-HYEOUNG ; KIM TAE-HYUN ; KIM YONG-SEOK ; KIM JUNG-HWAN ; NAMKOONG HYUN</creator><creatorcontrib>NAM SEOK-WOO ; YU TEA-KWANG ; LEAM HUN-HYEOUNG ; KIM TAE-HYUN ; KIM YONG-SEOK ; KIM JUNG-HWAN ; NAMKOONG HYUN</creatorcontrib><description>A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131205&DB=EPODOC&CC=US&NR=2013320461A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20131205&DB=EPODOC&CC=US&NR=2013320461A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAM SEOK-WOO</creatorcontrib><creatorcontrib>YU TEA-KWANG</creatorcontrib><creatorcontrib>LEAM HUN-HYEOUNG</creatorcontrib><creatorcontrib>KIM TAE-HYUN</creatorcontrib><creatorcontrib>KIM YONG-SEOK</creatorcontrib><creatorcontrib>KIM JUNG-HWAN</creatorcontrib><creatorcontrib>NAMKOONG HYUN</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME</title><description>A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UfB3U3BzdArydHYM8fRzVwjxcFUIdvR15WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgaGxsZGBiZmho6GxsSpAgC5oii3</recordid><startdate>20131205</startdate><enddate>20131205</enddate><creator>NAM SEOK-WOO</creator><creator>YU TEA-KWANG</creator><creator>LEAM HUN-HYEOUNG</creator><creator>KIM TAE-HYUN</creator><creator>KIM YONG-SEOK</creator><creator>KIM JUNG-HWAN</creator><creator>NAMKOONG HYUN</creator><scope>EVB</scope></search><sort><creationdate>20131205</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME</title><author>NAM SEOK-WOO ; YU TEA-KWANG ; LEAM HUN-HYEOUNG ; KIM TAE-HYUN ; KIM YONG-SEOK ; KIM JUNG-HWAN ; NAMKOONG HYUN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2013320461A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAM SEOK-WOO</creatorcontrib><creatorcontrib>YU TEA-KWANG</creatorcontrib><creatorcontrib>LEAM HUN-HYEOUNG</creatorcontrib><creatorcontrib>KIM TAE-HYUN</creatorcontrib><creatorcontrib>KIM YONG-SEOK</creatorcontrib><creatorcontrib>KIM JUNG-HWAN</creatorcontrib><creatorcontrib>NAMKOONG HYUN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAM SEOK-WOO</au><au>YU TEA-KWANG</au><au>LEAM HUN-HYEOUNG</au><au>KIM TAE-HYUN</au><au>KIM YONG-SEOK</au><au>KIM JUNG-HWAN</au><au>NAMKOONG HYUN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME</title><date>2013-12-05</date><risdate>2013</risdate><abstract>A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_epo_espacenet_US2013320461A1 |
source | esp@cenet |
subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T11%3A36%3A47IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAM%20SEOK-WOO&rft.date=2013-12-05&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2013320461A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |