SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active...

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Bibliographische Detailangaben
Hauptverfasser: NAM SEOK-WOO, YU TEA-KWANG, LEAM HUN-HYEOUNG, KIM TAE-HYUN, KIM YONG-SEOK, KIM JUNG-HWAN, NAMKOONG HYUN
Format: Patent
Sprache:eng
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Zusammenfassung:A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region.