IN-SITU BARRIER OXIDATION TECHNIQUES AND CONFIGURATIONS

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device may include a buffer layer disposed on a substrate, the buffer layer including gallium (Ga) and nitrogen (N), a barrier layer disposed on the buffer layer, the barrier layer including aluminum (Al) and nitrogen (N), wherein the barrier layer includes an oxidized portion of the barrier layer, a gate dielectric disposed on the oxidized portion of the barrier layer, and a gate electrode disposed on the gate dielectric, wherein the oxidized portion of the barrier layer is disposed in a gate region between the gate electrode and the buffer layer.