METHOD FOR FORMING A SELF-ALIGNED CONTACT OPENING BY A LATERAL ETCH

METHOD FOR FORMING A SELF-ALIGNED CONTACT OPENING BY A LATERAL ETCH

A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an interlayer dielectric (ILD) over the two gate stacks and in a space therebetween, forming a vertical contact ope...

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Bibliographische Detailangaben
Hauptverfasser: HORAK DAVID VACLAV, FAN SU CHEN, BALASUBRAMANIAN PRANATHARTHIHARAN HARAN, SHOM PONOTH, XIE RUILONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A self-aligned source/drain contact formation process without spacer or cap loss is described. Embodiments include providing two gate stacks, each having spacers on opposite sides, and an interlayer dielectric (ILD) over the two gate stacks and in a space therebetween, forming a vertical contact opening within the ILD between the two gate stacks, and laterally removing ILD between the two gate stacks from the vertical contact opening toward the spacers, to form a contact hole.