SEMICONDUCTOR INTEGRATED CIRCUIT

One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, eac...

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Hauptverfasser: HAGISHIMA DAISUKE, FUJITA SHINOBU, MATSUMOTO MARI, KURITA TAKAHIRO, ZAITSU KOICHIRO, TATSUMURA KOSUKE, YASUDA SHINICHI, ODA MASATO, KINOSHITA ATSUHIRO, NISHI YOSHIFUMI
Format: Patent
Sprache:eng
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Zusammenfassung:One embodiment provides a semiconductor integrated circuit, including: a substrate; a plurality of nonvolatile memory portions formed in the substrate, each including a first nonvolatile memory and a second nonvolatile memory; and a plurality of logic transistor portions formed in the substrate, each including at least one of logic transistor, wherein the logic transistors include: a first transistor which is directly connected to drains of the first and second nonvolatile memories at its gate; and a second transistor which is not directly connected to the drains of the first and second nonvolatile memories, and wherein a bottom surface of the gate of each of the logic transistors sandwiching the first and second nonvolatile memories is lower in height from a top surface of the substrate than a bottom surface of the control gate of each of the first and second nonvolatile memories.