SYSTEMS AND METHODS FOR SITE CONTROLLED CRYSTALLIZATION

Systems and methods for site controlled crystallization are disclosed. According to one aspect, a method for forming a composite film is disclosed. In one example embodiment, the method includes forming a layer of amorphous material. The method also includes forming a layer of metal material on each...

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Bibliographische Detailangaben
Hauptverfasser:	NASEEM HAMEED, YOUNG MATTHEW G, NEWTON BENJAMIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Systems and methods for site controlled crystallization are disclosed. According to one aspect, a method for forming a composite film is disclosed. In one example embodiment, the method includes forming a layer of amorphous material. The method also includes forming a layer of metal material on each of a plurality of selected regions of the layer of amorphous material to form a structure including the layer of metal material on the layer of amorphous material, and annealing the structure to generate metal-induced crystallization at the interface of the layer of metal material and each of the selected regions of the layer of amorphous material such that crystalline structures are formed.