METHODS FOR FABRICATING DUAL DAMASCENE INTERCONNECT STRUCTURES

Methods for fabricating dual damascene interconnect structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include etching a via into a substrate through a first photoresist layer; patterning a second photoresist layer atop the subst...

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Hauptverfasser: YALAMANCHILI MADHAVA RAO, SIRAJUDDIN KHALID M, EATON BRAD, VIJAYEN JAYAGATAN R, MISHRA ROHIT
Format: Patent
Sprache:eng
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Zusammenfassung:Methods for fabricating dual damascene interconnect structures are provided herein. In some embodiments, a method for fabricating a dual damascene interconnect structure may include etching a via into a substrate through a first photoresist layer; patterning a second photoresist layer atop the substrate to define a trench pattern, wherein the via is aligned within the trench pattern, and wherein a portion of undeveloped photoresist remains in the via after patterning; and etching the trench into the substrate to form a dual damascene pattern in the substrate.