SEMICONDUCTOR PROCESS

A semiconductor process includes the following steps. A semiconductor substrate is provided. The semiconductor substrate has a patterned isolation layer and the patterned isolation layer has an opening exposing a silicon area of the semiconductor substrate. A silicon rich layer is formed on the side...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHENG MINUNG, LEE BO-SYUAN, LIAO CHIN-I, CHEN CHIEN-HAO, HSIEH YUNG-LUN, HSU CHIA-LIN
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A semiconductor process includes the following steps. A semiconductor substrate is provided. The semiconductor substrate has a patterned isolation layer and the patterned isolation layer has an opening exposing a silicon area of the semiconductor substrate. A silicon rich layer is formed on the sidewalls of the opening. An epitaxial process is performed to form an epitaxial structure on the silicon area in the opening.