MICROMECHANICAL SUBSTRATE FOR A DIAPHRAGM WITH A DIFFUSION BARRIER LAYER

At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 mum and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a hea...

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Bibliographische Detailangaben
Hauptverfasser: HEDLER HARRY, SCHIEBER MARKUS, FLEISCHER MAXIMILIAN, WEIDNER KARL, FREUDENBERG OLIVER, WIESNER KERSTIN, ZAPF JOERG, SCHREINER MANFRED
Format: Patent
Sprache:eng
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Zusammenfassung:At least two separate single-crystal silicon layers are formed in a micromechanical substrate which has a diaphragm in a partial region. The diaphragm has a thickness of less than 20 mum and includes part of a first of the single-crystal silicon layers. The substrate construction also includes a heating element configured to generate a temperature of more than 650° C. in at least part of the diaphragm. The substrate includes at least one diffusion barrier layer that reduces the oxidation of the first single-crystal silicon layer.