SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type which is provided on the first semiconductor layer, a third semiconductor layer of the first conductivity type which is selectively provided on a surface of the second semiconductor layer, an insulating film which is provided to cover an inner wall of a trench running into the first semiconductor layer from an upper face of the third semiconductor layer, a field plate electrode which is provided in a lower portion of the trench, a gate electrode which is provided on the field plate electrode via the insulating film, and a fourth semiconductor layer of the second conductivity type which is provided at least in a region direct below the trench, and comes into contact with the insulating film.