Integrated Power Transistor Circuit Having a Current-Measuring Cell

An integrated power transistor circuit includes a contact structure with a first section and a second section. The first section contacts doped regions of transistor cells in a cell array. The second section includes one or more first subsections which adjoin the first section and extend beyond the cell array in the region of selected transistor cells. A second subsection adjoins the one or more first subsections and forms a tapping line, for example for making contact with source regions of power transistor cells. In the region of the cell array, an electrode structure rests on the contact structure. This electrode structure is absent over the second section. The tapping line can thus be formed at a short distance from the electrode structure, with the result that the active chip area is only insubstantially reduced by the tapping line.