METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE

METHOD FOR PRODUCING PHOTOELECTRIC CONVERSION DEVICE

In a method for producing a photoelectric conversion device including a light absorption layer made of a CIGS-based compound semiconductor, a vacancy formation process for forming Cu vacancies in a surface layer of the light absorption layer in a layered member that is composed of a lower electrode...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: TADAKUMA YOSHIO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:In a method for producing a photoelectric conversion device including a light absorption layer made of a CIGS-based compound semiconductor, a vacancy formation process for forming Cu vacancies in a surface layer of the light absorption layer in a layered member that is composed of a lower electrode and the light absorption layer deposited on a substrate is performed, and after then, a pn junction is formed in the surface layer of the light absorption layer.