DIRECT RELATIVE MEASUREMENT OF MEMORY DURABILITY

DIRECT RELATIVE MEASUREMENT OF MEMORY DURABILITY

Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TRINGALI J. JAMES, HAUKNESS BRENT STEVEN, LINDSTADT ERIC
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:Disclosed is a memory including a plurality of resistive change memory cells, including at least a first group and a second group of the memory cells and a comparison circuit configured to conduct a direct relative comparison of a remaining endurance of the first group of memory cells to a remaining endurance of the second group of memory cells.