SEMICONDUCTOR DEVICE HAVING PLURAL STANDARD CELLS

Disclosed herein is a device that includes: a plurality of first standard cells arranged on a semiconductor substrate in a first direction, each of the first standard cells including at least one field-effect transistor; and a first power supply wiring extending in the first direction along one end...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUGIMOTO SATORU, SHIMIZU TAKANARI
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Disclosed herein is a device that includes: a plurality of first standard cells arranged on a semiconductor substrate in a first direction, each of the first standard cells including at least one field-effect transistor; and a first power supply wiring extending in the first direction along one end of the first standard cells in a second direction. The field-effect transistor including a gate electrode formed on a gate wiring layer. The first power supply wiring being formed on the gate wiring layer.