METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER

A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	VAAS KNUT, HERMERT NORMAN, LACHOWICZ AGATA, SCHUM BERTHOLD
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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