METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER

METHOD FOR THE WET-CHEMICAL ETCHING OF A HIGHLY DOPED SEMICONDUCTOR LAYER

A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: VAAS KNUT, HERMERT NORMAN, LACHOWICZ AGATA, SCHUM BERTHOLD
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for the wet-chemical etching of a silicon layer in an alkaline etching solution is provided, where the silicon layer is the surface region of a solar cell emitter. The method ensures that the surface region of the emitter is etched-back homogeneously using an oxidant-free alkaline etching solution comprising at least one organic moderator is used for the isotropic etching back of the surface region of the emitter, where the moderator has a dopant concentration of at least 1018 atoms/cm3.