METHODS OF FORMING ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES

METHODS OF FORMING ISOLATION STRUCTURES FOR SEMICONDUCTOR DEVICES

Disclosed herein are various methods of forming isolation structures, such as trench isolation structures, for semiconductor devices. In one example, the method includes forming a trench in a semiconducting substrate, forming a lower isolation structure in the trench, wherein the lower isolation str...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: RADECKER JORG, THEES HANS-JUERGEN, JAVORKA PETER, KRONHOLZ STEPHAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Disclosed herein are various methods of forming isolation structures, such as trench isolation structures, for semiconductor devices. In one example, the method includes forming a trench in a semiconducting substrate, forming a lower isolation structure in the trench, wherein the lower isolation structure has an upper surface that is below an upper surface of the substrate, and forming an upper isolation structure above the lower isolation structure, wherein a portion of the upper isolation structure is positioned within the trench.