ACTIVATION PROCESS TO IMPROVE METAL ADHESION

Native oxide removing and activating solutions containing fluoride ions and organic acids are used in the formation of metal layers on semiconductor wafers. The method may also be used in the formation of silicides and for preparing the metal silicides for additional metal plating and build-up. The...

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Bibliographische Detailangaben
Hauptverfasser:	HAMM GARY, WEI LINGYUN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE
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Beschreibung
Zusammenfassung:	Native oxide removing and activating solutions containing fluoride ions and organic acids are used in the formation of metal layers on semiconductor wafers. The method may also be used in the formation of silicides and for preparing the metal silicides for additional metal plating and build-up. The solutions and methods may be used in the manufacture of photovoltaic devices and other electronic devices and components.