SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING THE SAME

A semiconductor structure and a method of fabricating the same comprising the steps of providing a substrate, forming at least one fin structure on said substrate, forming a gate covering said fin structure, forming a plurality of epitaxial structures covering said fin structures, performing a gate...

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Bibliographische Detailangaben
Hauptverfasser: LIN CHUN-HSIEN, FU SSU-I, CHEN CHIH-WEI, LIN CHIEN-TING, CHIANG WEN-TAI, TUNG YUNG, TSAI SHIH-HUNG, LIU ANI, CHEN YING-TSUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor structure and a method of fabricating the same comprising the steps of providing a substrate, forming at least one fin structure on said substrate, forming a gate covering said fin structure, forming a plurality of epitaxial structures covering said fin structures, performing a gate pullback process to reduce the critical dimension (CD) of said gate and separate said gate and said epitaxial structures, forming lightly doped drains (LDD) in said fin structures, and forming a spacer on said gate and said fin structures.