TARGETED TEMPERATURE COMPENSATION IN CHEMICAL VAPOR DEPOSITION SYSTEMS

Targeted temperature compensation for use with a chemical vapor deposition (CVD) apparatus. A localized temperature monitoring system is configured to provide localized temperature information representing surface temperatures of portions of the one or more wafers on a wafer carrier while the wafer...

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Bibliographische Detailangaben
1. Verfasser:	SHAMOUN BASSAM
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	Targeted temperature compensation for use with a chemical vapor deposition (CVD) apparatus. A localized temperature monitoring system is configured to provide localized temperature information representing surface temperatures of portions of the one or more wafers on a wafer carrier while the wafer carrier is rotating in a CVD process. A temperature profiling system is configured to generate a temperature profile that is indicative of localized cold spots on a surface of the one or more wafers. The temperature profile is based on the localized temperature information. A targeted heating system is configured to selectively apply localized heat to the localized cold spots dynamically based on the temperature profile such that a thermal distribution of the surface of the one or more wafers is made more uniform while a CVD process is carried out on the CVD apparatus.