IN-SITU PRE-CLEAN PRIOR TO EPITAXY

Methods for low temperature cleaning of a semiconductor surface prior to in-situ deposition have high throughput and consume very little of the thermal budget. GeH4 deposits Ge on the surface and converts any surface oxygen to GeOx. An etchant, such as Cl2 or HCl removes Ge and any GeOx and epitaxia...

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Bibliographische Detailangaben
Hauptverfasser:	TOMASINI PIERRE, THOMAS SHAWN G, CODY NYLES W
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLEANING CLEANING IN GENERAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY PERFORMING OPERATIONS PREVENTION OF FOULING IN GENERAL SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	Methods for low temperature cleaning of a semiconductor surface prior to in-situ deposition have high throughput and consume very little of the thermal budget. GeH4 deposits Ge on the surface and converts any surface oxygen to GeOx. An etchant, such as Cl2 or HCl removes Ge and any GeOx and epitaxial deposition follows. A spike in Ge concentration can be left on the substrate from diffusion into the substrate. All three steps can be conducted sequentially in-situ at temperatures lower than conventional bake steps.