MEASURING BIAS TEMPERATURE INSTABILITY INDUCED RING OSCILLATOR FREQUENCY DEGRADATION

MEASURING BIAS TEMPERATURE INSTABILITY INDUCED RING OSCILLATOR FREQUENCY DEGRADATION

A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in th...

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Bibliographische Detailangaben
Hauptverfasser: BROCHU, JR. DAVID G, IOANNOU DIMITRIS P, MERRILL TRAVIS S, MITTL STEVEN W
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
MEASURING
MEASURING ELECTRIC VARIABLES
MEASURING MAGNETIC VARIABLES
PHYSICS
PULSE TECHNIQUE
TESTING
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Beschreibung
Zusammenfassung:A method establishes an initial voltage in a ring oscillator and a logic circuit of an integrated circuit device. Following this, the method enables the operating state of the ring oscillator. After enabling the operating state of the ring oscillator, the method steps up to a stressing voltage in the ring oscillator. The initial voltage is approximately one-half the stressing voltage. The stressing voltage creates operating-level stress within the ring oscillator. The method measures the operating-level frequency within the ring oscillator using an oscilloscope (after stepping up to the stressing voltage).