VOID FREE INTERLAYER DIELECTRIC

VOID FREE INTERLAYER DIELECTRIC

A method of manufacturing a non-volatile memory device includes forming a number of memory cells. The method also includes depositing a first dielectric layer over the memory cells, where the first dielectric layer is a conformal layer having a substantially uniform thickness. The method further inc...

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Hauptverfasser: NGO MINH VAN, HUI ANGELA T, TOKUNO HIROKAZU, LI WENMEI, THIO HSIAO-HAN
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator NGO MINH VAN
HUI ANGELA T
TOKUNO HIROKAZU
LI WENMEI
THIO HSIAO-HAN
description A method of manufacturing a non-volatile memory device includes forming a number of memory cells. The method also includes depositing a first dielectric layer over the memory cells, where the first dielectric layer is a conformal layer having a substantially uniform thickness. The method further includes depositing a second dielectric layer over the first dielectric layer. Together, the first and second dielectric layers form an interlayer dielectric without voids.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title VOID FREE INTERLAYER DIELECTRIC
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