POLYCRYSTALLINE SILICON INGOT MANUFACTURING APPARATUS, POLYCRYSTALLINE SILICON INGOT MANUFACTURING METHOD, AND POLYCRYSTALLINE SILICON INGOT

POLYCRYSTALLINE SILICON INGOT MANUFACTURING APPARATUS, POLYCRYSTALLINE SILICON INGOT MANUFACTURING METHOD, AND POLYCRYSTALLINE SILICON INGOT

A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WAKITA SABURO, TSUZUKIHASHI KOJI, IKEDA HIROSHI, KANAI MASAHIRO
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
COMPOUNDS THEREOF
CRYSTAL GROWTH
INORGANIC CHEMISTRY
METALLURGY
NON-METALLIC ELEMENTS
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A polycrystalline silicon ingot manufacturing apparatus, a polycrystalline silicon ingot manufacturing method, and a polycrystalline silicon ingot are provided. The apparatus comprises: a crucible having a rectangular shape in a cross-section; an upper heater provided above the crucible; and a lower heater provided below the crucible. A silicon melt stored in the crucible is solidified from a bottom surface of the crucible upward unidirectionally. The apparatus further comprises an auxiliary heater that heats at least a bottom-surface-side portion of a sidewall of the crucible. The production yield can be improved by using the apparatus and by reducing the oxygen concentration at the location where the oxygen concentration tends to be high locally at the bottom part of the ingot.