ION BEAM DEPOSITION OF FLUORINE-BASED OPTICAL FILMS

The presently disclosed technology uses dissociated fluorine and one or both of hydrogen and oxygen to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclo...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: ODE AIKO, MAHONEY LEONARD JOSEPH, GEORGE JASON
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The presently disclosed technology uses dissociated fluorine and one or both of hydrogen and oxygen to assist the deposition of metal-fluoride thin films having low optical losses using ion sputter deposition. The dissociated fluorine and one or both of hydrogen and oxygen are injected into an enclosure within which the sputter deposition operations occur. The dissociated fluorine and one or both of hydrogen and oxygen assist the sputtering of metal-fluoride material from a target and/or deposition of the sputtered metal-fluoride on one or more substrates.