GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME
To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a c...
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| creator | ARAI NORIAKI SHICHI HIROYASU MATSUBARA SHINICHI MUTO HIROYUKI HASHIZUME TOMIHIRO KAGA HIROYASU KAWANAMI YOSHIMI MORITANI HIRONORI SAHO NORIHIDE OSE YOICHI |
| description | To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more. |
| format | Patent |
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| language | eng |
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| subjects | BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM |
| title | GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME |
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