GAS FIELD ION SOURCE AND METHOD FOR USING SAME, ION BEAM DEVICE, AND EMITTER TIP AND METHOD FOR MANUFACTURING SAME

To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a c...

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Bibliographische Detailangaben
Hauptverfasser:	ARAI NORIAKI, SHICHI HIROYASU, MATSUBARA SHINICHI, MUTO HIROYUKI, HASHIZUME TOMIHIRO, KAGA HIROYASU, KAWANAMI YOSHIMI, MORITANI HIRONORI, SAHO NORIHIDE, OSE YOICHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CLADDING OR PLATING BY SOLDERING OR WELDING CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR PERFORMING OPERATIONS SOLDERING OR UNSOLDERING TRANSPORTING WELDING WORKING BY LASER BEAM
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Beschreibung
Zusammenfassung:	To provide a gas field ion source having a high angular current density, the gas field ion source is configured such that at least a base body of an emitter tip configuring the gas field ion source is a single crystal metal, such that the apex of the emitter tip is formed into a pyramid shape or a cone shape having a single atom at the top, and such that the extraction voltage in the case of ionizing helium gas by the single atom is set to 10 kV or more.