PLASMA TREATMENT OF SUBSTRATES

A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas to flow from the inlet past the electrode to the outlet, thereby generating a non-equ...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	GAUDY THOMAS, LEEMPOEL PATRICK, TOUTANT ADRIEN, DESCAMPS PIERRE, MASSINES FRANCOISE, KAISER VINCENT
Format:	Patent
Sprache:	eng
Schlagworte:	APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PERFORMING OPERATIONS PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL SPRAYING OR ATOMISING IN GENERAL SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A process for plasma treating a substrate comprises applying a radio frequency high voltage to at least one electrode positioned within a dielectric housing having an inlet and an outlet while causing a process gas to flow from the inlet past the electrode to the outlet, thereby generating a non-equilibrium atmospheric pressure plasma. An atomized or gaseous surface treatment agent is incorporated in the non-equilibrium atmospheric pressure plasma. The substrate is positioned adjacent to the plasma outlet so that the surface is in contact with the plasma and is moved relative to the plasma outlet. The flow of process gas and the gap between the plasma outlet and the substrate are controlled so that the process gas has a turbulent flow regime within the dielectric housing.