FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) BASED, METAL-SEMICONDUCTOR ALLOY FUSE DEVICE AND METHOD OF MANUFACTURING SAME

FIN-LIKE FIELD EFFECT TRANSISTOR (FINFET) BASED, METAL-SEMICONDUCTOR ALLOY FUSE DEVICE AND METHOD OF MANUFACTURING SAME

A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second cont...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KUNG WEIANG, LIANG MINCHANG, WU SHIEN-YANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A fuse device and method for fabricating the fuse device is disclosed. An exemplary fuse device includes a first contact and a second contact coupled with a metal-semiconductor alloy layer, wherein the metal-semiconductor alloy layer extends continuously between the first contact and the second contact. The metal-semiconductor alloy layer is disposed over an epitaxial layer that is disposed over a fin structure of a substrate.