SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

SEMICONDUCTOR MEMORY DEVICES AND METHODS OF FABRICATING THE SAME

A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode l...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HWANG KWANGTAE, KIM HYONGSOO, HONG EUNKEE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor memory device includes at least one supporting pattern on a substrate, a storage node penetrating the supporting pattern, an electrode layer disposed around the storage node and the supporting pattern, and a capacitor dielectric interposed between the storage node and the electrode layer. The supporting pattern includes germanium oxide.