U-SHAPE RESURF MOSFET DEVICES AND ASSOCIATED METHODS OF MANUFACTURING

The present technology discloses a U-shape RESURF MOSFET device. Wherein the MOSFET device comprises a drain having a drain contact region and a drift region, a source, a body, a gate and a recessed-FOX structure. Wherein the recessed-FOX structure is between the gate and the drift region vertically...

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1. Verfasser: JUNG JEESUNG
Format: Patent
Sprache:eng
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