U-SHAPE RESURF MOSFET DEVICES AND ASSOCIATED METHODS OF MANUFACTURING

U-SHAPE RESURF MOSFET DEVICES AND ASSOCIATED METHODS OF MANUFACTURING

The present technology discloses a U-shape RESURF MOSFET device. Wherein the MOSFET device comprises a drain having a drain contact region and a drift region, a source, a body, a gate and a recessed-FOX structure. Wherein the recessed-FOX structure is between the gate and the drift region vertically...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: JUNG JEESUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present technology discloses a U-shape RESURF MOSFET device. Wherein the MOSFET device comprises a drain having a drain contact region and a drift region, a source, a body, a gate and a recessed-FOX structure. Wherein the recessed-FOX structure is between the gate and the drift region vertically and between the body and the drain contact region laterally, and wherein the recessed-FOX structure is configured to make the drift region into a U shape. The present technology further discloses the depth of the drift region is controlled by adjusting a layout width.