METHODS OF MANUFACTURING LATERAL DIFFUSED MOS DEVICES WITH LAYOUT CONTROLLED BODY CURVATURE AND RELATED DEVICES

METHODS OF MANUFACTURING LATERAL DIFFUSED MOS DEVICES WITH LAYOUT CONTROLLED BODY CURVATURE AND RELATED DEVICES

The present invention discloses a method of manufacturing an N-type LDMOS device. The method comprises forming a gate above the semiconductor substrate; forming a body, comprising forming a Pwell apart from the gate and forming a Pbase partly in the Pwell, wherein the Pbase is wider and shallower th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: JUNG JEESUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present invention discloses a method of manufacturing an N-type LDMOS device. The method comprises forming a gate above the semiconductor substrate; forming a body, comprising forming a Pwell apart from the gate and forming a Pbase partly in the Pwell, wherein the Pbase is wider and shallower than the Pwell; and forming an N-type source and a drain contact region. Wherein the body curvature of the LDMOS device is controlled by adjusting the layout width of the Pwell.