FORMING SIC MOSFETS WITH HIGH CHANNEL MOBILITY BY TREATING THE OXIDE INTERFACE WITH CESIUM IONS

FORMING SIC MOSFETS WITH HIGH CHANNEL MOBILITY BY TREATING THE OXIDE INTERFACE WITH CESIUM IONS

Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased...

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Bibliographische Detailangaben
Hauptverfasser: DHAR SARIT, AGARWAL ANANT, RYU SEI-HYUNG, WILLIAMS JOHN ROBERT
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.