PROCESS OF MAKING A LITHOGRAPHIC STRUCTURE USING ANTIREFLECTIVE MATERIALS

A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a trans...

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Bibliographische Detailangaben
Hauptverfasser:	HALLE SCOTT D, BURNS SEAN D, GABOR ALLEN H, MAHOROWALA ARPAN P, BABICH KATHERINA E, PFEIFFER DIRK, ANGELOPOULOS MARIE
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TRANSPORTING
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Beschreibung
Zusammenfassung:	A lithographic structure comprising: an organic antireflective material disposed on a substrate, and a silicon antireflective material disposed on the organic antireflective material. The silicon antireflective material comprises a crosslinked polymer with a SiOx backbone, a chromophore, and a transparent organic group that is substantially transparent to 193 nm or 157 nm radiation. In combination, the organic antireflective material and the silicon antireflective material provide an antireflective material suitable for deep ultraviolet lithography. The invention is also directed to a process of making the lithographic structure.