MEMORY HAVING THREE-DIMENSIONAL STRUCTURE AND MANUFACTURING METHOD THEREOF

Provided are a memory having a 3-dimensional structure and a method of fabricating the same, by which high integration density can be obtained. A contact region connected to a word line is formed to extend from a cell region in a first direction. A plurality of step difference layers constituting the contact region are formed to have step differences in a second direction different from the first direction. Also, provided is a method of fabricating a nonvolatile memory by which step differences are formed in a direction substantially perpendicular to a direction in which active regions are aligned. An insulating layer and etching layers are sequentially formed. By performing a selective etching process and pattern transfer, step differences are formed in a direction perpendicular to a direction in which multilayered active layers are disposed. Furthermore, the etching layers are removed using a wet etching process, and an oxide-nitride-oxide (ONO) layer and conductive layers are provided on the multilayered active layers having exposed side surfaces to form cell transistors. Thus, a memory having a high integration density is fabricated.