NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF

NON-VOLATILE MEMORY CELL AND FABRICATING METHOD THEREOF

A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. T...

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Bibliographische Detailangaben
Hauptverfasser: LEE HSIANGN, HUANG CHUN-SUNG, WANG CHIH-MING, SHIH PINGIA, HUANG CHING, LIN CHIH-HUNG, SHEU YAU-KAE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A non-volatile memory cell includes a substrate, two charge trapping structures, a gate oxide layer, a gate and two doping regions. The charge trapping structures are disposed on the substrate separately. The gate oxide layer is disposed on the substrate between the two charge trapping structures. The gate is disposed on the gate oxide layer and the charge trapping structures, wherein the charge trapping structures protrude from two sides of the gate. The doping regions are disposed in the substrate at two sides of the gate.