LIGHT-EMITTING DEVICE WITH HETEROPHASE BOUNDARIES

The invention relates to light-emitting devices (200); in particular, to high effective light-emitting diodes on the base of nitrides of III group elements of the periodic system. The proposed light-emitting device comprises a substrate, a buffer layer (120) formed on the substrate, a first layer (130) from n-type semiconductor formed on the buffer layer, a second layer (150) from p-type semiconductor and an active layer (240) arranged between the first and second layers. The first, the second and the active layers form interlacing of the layers with zinc blende phase structure and layers with wurtzite phase structure forming heterophase boundaries therebetween. Technical result of the invention is increasing the effectiveness (efficiency) of the light-emitting device at the expense of heterophase boundaries available in the light-emitting device which allow to eliminate formation of the potential wells for holes, to increase the uniformity of the hole distribution in the active layer and to ensure suppression of nonradiative Auger recombination.