MANUFACTURING METHOD FOR METAL GATE

A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function co...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHANG CHIA-LUNG, WU YIING, LIN YU-MIN, WANG YU-REN, CHEN JEI-MING, LU TSUO-WEN, HSU CHUN-WEI, CHEN CHIHUNG, YEN YING-WEI, CHIEN CHINNG, LIN CHIEN-LIANG, CHAN SHU-YEN, TENG WEN-YI, WANG SHAO-WEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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