MANUFACTURING METHOD FOR METAL GATE

A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function co...

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Bibliographische Detailangaben
Hauptverfasser:	CHANG CHIA-LUNG, WU YIING, LIN YU-MIN, WANG YU-REN, CHEN JEI-MING, LU TSUO-WEN, HSU CHUN-WEI, CHEN CHIHUNG, YEN YING-WEI, CHIEN CHINNG, LIN CHIEN-LIANG, CHAN SHU-YEN, TENG WEN-YI, WANG SHAO-WEI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A manufacturing method for a metal gate includes providing a substrate having at least a semiconductor device with a conductivity type formed thereon, forming a gate trench in the semiconductor device, forming a work function metal layer having the conductivity type and an intrinsic work function corresponding to the conductivity type in the gate trench, and performing an ion implantation to adjust the intrinsic work function of the work function metal layer to a target work function.