PROCESSED HIGH-PURITY COPPER MATERIAL HAVING UNIFORM AND FINE CRYSTALLINE STRUCTURE, AND PROCESS FOR PRODUCTION THEREOF

This worked high-purity copper material includes Cu having a purity of 99.9999% by mass or more, wherein an average crystal grain size is in a range of 20 μm or less, and in a grain size distribution of crystal grains, an area ratio of crystal grains having grain sizes that exceed 2.5 times the aver...

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Hauptverfasser: KOIDE MASATO, KUMAGAI SATOSHI
Format: Patent
Sprache:eng
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Zusammenfassung:This worked high-purity copper material includes Cu having a purity of 99.9999% by mass or more, wherein an average crystal grain size is in a range of 20 μm or less, and in a grain size distribution of crystal grains, an area ratio of crystal grains having grain sizes that exceed 2.5 times the average crystal grain size is in a range of less than 10% of an area of the entire crystal grains. This method for producing a worked high-purity copper material includes: subjecting an ingot composed of high-purity copper having a Cu purity of 99.9999% by mass or more to hot forging at an initial temperature of 550° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to warm forging at an initial temperature of 350° C. or higher, and then water-cooling the ingot; subsequently, subjecting the ingot to cold cross-rolling at a total reduction ratio of 50% or more; and subsequently, subjecting the ingot to stress relief annealing at a temperature of 200° C. or higher.