NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME

A nitride semiconductor light emitting element has: a substrate for growth; an n-type nitride semiconductor layer formed on the substrate for growth; a light emitting layer formed on the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer formed on the light emitting layer, wherein pipe holes are formed at a density of 5000 pipe holes/cm2 or less, each of which extends substantially vertically from a surface of the n-type nitride semiconductor layer on the light emitting layer side toward the substrate and has a diameter of 2 to 200 nm.