GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE

A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle i...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	NAKAHATA SEIJI, NAKANISHI FUMITAKE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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